Synthesis and properties of thallium nitride films, L.R.Shaginyan, Materials Chemistry and Physics, Volume 227, 2019, Pages 157-162,.Indium nitride from indium iodide at low temperatures: synthesis and their optical properties by Changzheng Wu et.al., New J.Ravichandran ( 2013) Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions, Journal of Experimental Nanoscience, 8:7-8, 957-964, DOI: 10.1080/17458080.2011.630034 Direct elementary reactions of boron and nitrogen at high pressures and temperaturesĬ.Thallium: Thallium nitride has been synthesized in a film form by DC reactive sputtering of metal thallium in nitrogen.There is also a certain low-temp reaction (250☌) of indium iodide and nitrogen to obtain indium nitride. So, a technique called ion-implantation is used to obtain indium nitride nanoclusters over silica matrix. Indium: Direct combination of indium and nitrogen cannot be done due to factors like dissociation of $\ce$ films.Gallium: Gallium nitride is formed by the direct combination of elements at 1200 ☌.Aluminum: There is a paper(3) which discussed about combustion of aluminum in a high-temperature and high pressure (up to 300 MPa) nitrogen atmosphere to form aluminum nitride.All group 13 elements (can technically) form nitrides from the direct combination of the elements (elemental reaction).
0 kommentar(er)
